CR Micro SiC Diode Distributor | JBS 650 V to 1700 V

BeiLuo supplies genuine CR Micro silicon carbide junction barrier Schottky (JBS) diodes, rectifiers that combine a Schottky barrier with a junction structure for low forward voltage and enhanced surge capability. Because a SiC diode has essentially no reverse-recovery charge, it eliminates the recovery loss and the switching noise of a silicon fast-recovery diode, which makes it ideal for the freewheeling, rectification and power-factor-correction paths of high-frequency converters. CR Micro offers the JBS diode from 650 V to 1700 V and from about 2 A to 160 A, in packages that range from the surface-mount DFN and TO-252 to the classic TO-220, TO-247 and the high-current SOT-227, with a typical forward voltage around 1.3 to 1.4 V and strong surge capability up to 540 A. The JBS structure raises the surge withstand compared with a plain Schottky diode, which matters at power-up when a large capacitor charges through the rectifier, and the positive temperature coefficient of forward voltage allows paralleling for higher current. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you match VRRM, forward current and package to your converter and pair the diode with the right switch. Selecting a SiC diode is mostly about matching the reverse voltage and forward current to your circuit, then choosing the package for your cooling and board.