CRJQF22N65G4BFQ

The CRJQF22N65G4BFQ is a 650 V / 96 A CR Micro N-channel silicon power MOSFET from the fourth-generation Super Junction family, in the four-lead TO-247-4L package, with a typical on-resistance of 21 milliohm at a 10 V gate drive. A Super Junction structure uses charge balance to lower on-resistance sharply for a given voltage, so a 650 V switch conducts with much less loss than a conventional planar device, which makes it efficient for power-factor correction, switch-mode power supplies, solar inverters and motor drives. The four-lead package provides a Kelvin source connection that removes source inductance from the gate loop, so the device switches cleanly at high frequency, and the fast body diode freewheels in a bridge. The 96 A rating and 650 V class suit high-power converters that run from a 380 V bus with margin. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm the gate drive, the switching loop and the hot on-resistance for the thermal design. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.