CRXQF13M120G4Z

The CRXQF13M120G4Z is a 1200 V / 145 A CR Micro silicon carbide MOSFET in the four-lead TO-247-4 package, from the fourth-generation SiC family, with a typical on-resistance of 17 milliohm at a 15 V gate drive and a gate charge of 202 nC. Silicon carbide has no tail current and switches far faster than silicon with lower switching loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, EV charging, solar inverters and energy storage. The four-lead package provides a Kelvin source connection that removes source inductance from the gate loop, which tames the ringing that fast SiC switching would otherwise cause. The 1200 V rating provides margin for an 800 V battery architecture or a 400 V class bus, and the low on-resistance keeps conduction loss small at 145 A. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm gate drive, loop inductance and the hot on-resistance. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.